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T. -C. Shen
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Professor of Physics
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Professor of Physics,
Utah State University
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Nanoelectronics
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Courses
Solid state physics I
Introduction to Microfabrication
Links
http://www.usu.edu/nanolab/
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Articles
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Articles
(43)
Article
Functionalizing Carbon Nanotube Forests with 1,5-diaminoaphthalene
Utah Conference on Undergraduate Research (2014)
Ben Pound and T. -C. Shen
Carbon Nanotube (CNT) Forests are vertically grown carbon nanotubes. They can be as tall as millimeters, with radii from less ...
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Article
Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC ...
JOURNAL OF APPLIED PHYSICS (2012)
T. Shen, A. T. Neal, M. L. Bolen, Jiangjiang Gu, et al.
We investigate the low-temperature magneto-transport properties of monolayer epitaxial graphene films formed on the Si-face of semi-insulating 4H SiC substrates ...
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Article
The density factor in the synthesis of carbon nanotube forest ...
Journal of Applied Physics (2012)
Robert W. Call, C. Read, C Mart and T. C. Shen
Beneath the seeming straight-forwardness of growing carbon nanotube(CNT) forests by the injection chemical vapor deposition(CVD) method, control of the forest ...
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Article
The Density Factor in the Synthesis of Carbon Nanotube Forest ...
Journal of Applied Physics (2012)
R. W. Call, C. G. Read, C. Mart and T. -C. Shen
Beneath the seeming straight-forwardness of growing carbon nanotube(CNT) forests by the injection chemical vapor deposition(CVD) method, control of the forest ...
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Article
New Emerging Techniques
Nanofabrication Handbook (2011)
T. Schenkel, T. C. Shen, Y. Wang and X. Zhang
Article
A scanning tunneling microscopy study of PH3 adsorption on Si ...
Surface Science (2007)
J. -Y. Ji and T. C. Shen
PH 3 adsorption on Si(1 1 1)-7 × 7 was studied after various exposures between 0.3 and 60 L at ...
Link
Article
Low-temperature charge transport in Ga-acceptor nanowires implanted by focused-ion beams
Applied Physics Letters (2007)
S. J. Robinson, C. L. Perkins, T. -C. Shen, J. R. Tucker, et al.
Ga-acceptor nanowires were embedded in crystalline Si using focused-ion beams. The dc current-voltage characteristics of these wires after annealing are ...
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Article
Electron transport in laterally confined phosphorus δ-layers in silicon
Physical Review B (2006)
S. J. Robinson, J. S. Kline, H. J. Wheelwright, J. R. Tucker, et al.
Two-dimensional electron systems fabricated from a single layer of P-donors have been lithographically confined to nanometer scale in lateral directions. ...
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Article
Low Temperature Silicon Epitaxy on Hydrogen Terminated Si(100) Surfaces
Physical Review B (2004)
J. -Y. Ji and T. -C. Shen
Si deposition on H terminated Si(001)-2×1 surfaces at temperatures 300–530K is studied by scanning tunneling microscopy. Hydrogen apparently hinders Si ...
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Article
Nanoscale electronics based on 2D dopant patterns in silicon
The Journal of Vacuum Science and Technology B (2004)
T. -C. Shen, J. S. Kline, T. Schenkel, S. J. Robinson, et al.
A nanoscale fabrication process compatible with present Si technology is reported. Preimplanted contact arrays provide external leads for scanning tunneling ...
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Article
The road to a quantum computer
Quantum Information Process (2004)
J. R. Tucker and T. -C. Shen
Article
The role of antiphase boundaries during ion sputtering and solid ...
Surface Science (2003)
J. C. Kim, J. -Y. Ji, J. S. Kline, J. R. Tucker, et al.
The Si(0 0 1) surface morphology during ion sputtering at elevated temperatures and solid phase epitaxy (SPE) following ion sputtering ...
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Article
Preparation of atomically clean and flat Si(100) surfaces by ...
Applied Surface Science (2003)
J. C. Kim, J. -Y. Ji, J. R. Tucker and T. -C. Shen
Article
Ultra-dense phosphorous delta-layer grown into silicon from PH3 molecular precursors
Applied Physics Letters (2002)
T. -C. Shen, J. -Y. Ji, M. A. Zudov, R. -R. Du, et al.
Phosphorous δ-doping layers were fabricated in silicon by PH3 deposition at room temperature, followed by low-temperature Si epitaxy.Scanning tunneling microscope ...
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Article
Fabricating an all-epitaxial quantum computer
Quantum Information Computation (2001)
J. R. Tucker and T. C. Shen
Scalable silicon quantum computers will require a material perfection that has never been attempted. Ground state wavefunctions for conduction electrons ...
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Article
Can Single-Electron Integrated Circuits and Quantum Computers be Fabricated in ...
Integrated Journal of Circuit Theory and Applications (2000)
J. R. Tucker and T. C. Shen
Link
Article
Electron-stimulated bond rearrangements on the H/Si(100)-3x1 surface
Surface Science (2000)
T. C. Shen, J. A. Steckel and K. D. Jordan
Link
Article
Role of scanning probes in nanoelectronics: a critical review
Surface Review Letter (2000)
T. -C. Shen
Article
The initial stage of nucleation and growth of Al on ...
Applied Surface Science (1999)
T. -C. Shen, C. Wang and J. R. Tucker
Article
New approaches to silicon nanoelectronics
Future Electronics Device Report (1998)
J. R. Tucker and T. -C. Shen
Article
Prospects for atomically ordered device structures based on STM lithography
Solid State Electronics (1998)
J. R. Tucker and T. -C. Shen
Article
Toward atom-scale silicon electronics
Journal of Surface Analysis (1998)
J. R. Tucker and T. -C. Shen
Article
Al nucleation on monohydride and bare Si(001) surfaces: atomic ...
Physical Review Letters (1997)
T. C. Shen, C. Wang and J. R. Tucker
Submonolayer coverages of Al were evaporated onto hydrogen-terminated Si(001)−(2×1) surfaces and studied by scanning tunneling microscopy (STM). Nanoscale patterns of ...
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Article
Breaking individual chemical bonds via STM-induced excitations
Surface Science (1996)
Ph. Avouris, R. E. Walkup, A. R. Rossi, H. C. Akpati, et al.
We present experimental and theoretical results on the STM-induced SiH bond-breaking on the Si(100)-(2 × 1):H surface. First, we examine ...
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Article
Metal silicide patterning: a new approach to silicon nanoelectronics
Nanotechnology (1996)
J. R. Tucker, C. Wang and T. -C. Shen
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