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Low-temperature charge transport in Ga-acceptor nanowires implanted by focused-ion beams
Applied Physics Letters (2007)
  • S. J. Robinson
  • C. L. Perkins
  • T. -C. Shen, Utah State University
  • J. R. Tucker
  • T. Schenkel
  • X. W. Wang
  • T. P. Ma

Ga-acceptor nanowires were embedded in crystalline Si using focused-ion beams. The dc current-voltage characteristics of these wires after annealing are highly nonlinear at low temperatures. A conductance threshold of less than 50mV is observed independent of Ga+ dosage and implant beam overlap. These features suggest a Coulomb blockade transport mechanism presumably caused by a network of Ga precipitates in the substrate. This granular scenario is further supported by measurements of gated nanowires. Nanowires with metallic conductance at low temperatures could be achieved by reducing the current density of the focused-ion beams.

  • low temperature,
  • charge transport,
  • acceptor,
  • nanowires,
  • ion beams
Publication Date
January 1, 2007
Citation Information
S. J. Robinson, C. L. Perkins, T.-C. Shen, J. R. Tucker, T. Schenkel, X. W. Wang and T. P. Ma, “Low-temperature charge transport in Ga-acceptor nanowires implanted by focused-ion beams”, Appl. Phys. Lett. 91, 122105 (2007).