"Preparation of atomically clean and flat Si(100) surfaces by low-energy ion sputtering and low-temperature annealing" by J. C. Kim

Selected Works of T. -C. Shen

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Preparation of atomically clean and flat Si(100) surfaces by low-energy ion sputtering and low-temperature annealing

Applied Surface Science (2003)

J. C. Kim
J. -Y. Ji
J. R. Tucker
T. -C. Shen, Utah State University

Keywords

preparation,
atomically clean,
low-energy,
ion sputterin,
temperature,
annealing

Publication Date

January 1, 2003

Citation Information

J. C. Kim, J.-Y. Ji, J. S. Kline, J. R. Tucker, and T.-C. Shen, “Preparation of atomically clean and flat Si(100) surfaces by low-energy ion sputtering and low-temperature annealing,” Appl. Surf. Sci. 220, 293 (2003).