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Nanoscale electronics based on 2D dopant patterns in silicon
The Journal of Vacuum Science and Technology B (2004)
  • T. -C. Shen, Utah State University
  • J. S. Kline
  • T. Schenkel
  • S. J. Robinson
  • J. -Y. Ji
  • C. L. Yang
  • R. R. Du
  • J. R. Tucker

A nanoscale fabrication process compatible with present Si technology is reported. Preimplanted contact arrays provide external leads for scanning tunneling microscope (STM)-defined dopantpatterns. The STM’s low energy electron beam removes hydrogen from H terminated Si(100) surfaces for selective adsorption of PH3 precursor molecules, followed by room temperature Si overgrowth and 500 °C rapid thermal anneal to create activated P-donor patterns in contact with As+-implanted lines. Electrical and magnetoresistance measurements are reported here on 50 and 95 nm-wide P-donor lines, along with Ga-acceptor wires created by focused ion beams, as a means for extending Si device fabrication toward atomic dimensions.

  • nanoscale electronics,
  • dopant,
  • silicon
Publication Date
January 1, 2004
Citation Information
T.-C. Shen, J. S. Kline, T. Schenkel, S. J. Robinson, J.-Y. Ji, C. L.Yang, R. R. Du, J. R. Tucker, “Nanoscale electronics based on 2D dopant patterns in silicon”, J. Vac. Sci. Technol. B 22, 3182 (2004).