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Ultra-dense phosphorous delta-layer grown into silicon from PH3 molecular precursors
Applied Physics Letters (2002)
  • T. -C. Shen, Utah State University
  • J. -Y. Ji
  • M. A. Zudov
  • R. -R. Du
  • J. S. Kline
  • J. R. Tucker

Phosphorous δ-doping layers were fabricated in silicon by PH3 deposition at room temperature, followed by low-temperature Si epitaxy.Scanning tunneling microscope images indicate large H coverage, and regions of c(2×2) structure. Hall data imply full carrier activation with mobility<40 cm2/V s when the surface coverage is ≲0.2 ML. Conductivity measurements show a ln(T) behavior at low temperatures, characteristic of a high-density two-dimensional conductor. Possible future applications to atom-scale electronics and quantum computation are briefly discussed.

  • phosphorous,
  • delta-layer,
  • silicon,
  • precursors
Publication Date
January 1, 2002
Citation Information
T.-C. Shen, J.-Y. Ji, M. A. Zudov, R.-R. Du, J. S. Kline, J. R. Tucker, “Ultra-dense phosphorous delta-layer grown into silicon from PH3 molecular precursors,” Appl. Phys. Lett. 80, 1580-1582 (2002).