Carrier Capture Dynamics of Single InGaAs/GaAs Quantum-Dot Layers
(D. Mark Riffe, Kripa N Chauhan, E A Everett, et al.)
Journal of Applied Physics
(2013)
Using 800 nm, 25-fs pulses from a mode locked Ti:Al2O3 laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In0.4Ga0.6As/GaAs quantum-dot (QD)samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self ...