Article
Measurement of Silicon Surface Recombination Velocity Using Ultrafast Pump-Probe Reflectivityin the Near Infrared
Journal of Applied Physics
Document Type
Article
Publication Date
1-1-2000
Disciplines
Abstract
We demonstrate that ultrafast pump–probe reflectivity measurements from bulk Si samples using a Ti:sapphire femtosecond oscillator (λ=800 nm) can be used to measure the Si surface recombination velocity. The technique is sensitive to recombination velocities greater than ∼104 cm s−1
Citation Information
"Measurement of Silicon Surface Recombination Velocity Using Ultrafast Pump-Probe Reflectivity
in the Near Infrared," A. J. Sabbah and D. M. Riffe, J. Appl. Phys 88, 6954 (2000).
Published by American Institute of Physics in Journal of Applied Physics. Publisher PDF is available for download through link above.