SelectedWorks - Joseph W. Hemsky

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Selected Works of Joseph W. Hemsky

Professor Emeritus, Physics

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About Joseph W. Hemsky

1998	Professor Emeritus, Wright State University ‐ Physics
Institution Organization Position Type Position Title Time Period to Options Current Position Affiliate my profile with this Institution

Physical Sciences and Mathematics and Physics

Articles (11)

Article

Production and Annealing of Electron Irradiation Damage in ZnO

Applied Physics Letters (1999)

David C. Look, D. C. Reynolds, Joseph W. Hemsky, R. L. Jones, et al.

High-energy (>1.6 MeV) electrons create acceptors and donors in single-crystal ZnO. Greater damage is observed for irradiation in the [0001] ...

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Article

Residual Native Shallow Donor in ZnO

Physical Review Letters (1999)

David C. Look, Joseph W. Hemsky and J. R. Sizelove

High-energy electron irradiation in ZnO produces shallow donors at about EC-30meV. Because the production rate is much higher for Zn-face ...

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Article

Point Defect Characterization of GaN and ZnO

Materials Science and Engineering B-Solid State Materials for Advanced Technology (1999)

David C. Look, Z-Q. Fang, Joseph Hemsky, J. R. Sizelove, et al.

Point defects are created in bulk ZnO and epitaxial GaN by 1-2 MeV electron irradiation at 300 K, and are ...

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Article

Electron-Irradiation-Induced Deep Level in n-Type GaN

Applied Physics Letters (1998)

Z-Q. Fang, Joseph W. Hemsky, David C. Look and M. P. Mack

Deep-level transient spectroscopy measurements of n-type GaN epitaxial layers irradiated with 1-MeV electrons reveal an irradiation-induced electron trap at EC−0.18 ...

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Article

Defect Donor and Acceptor in GaN

Physical Review Letters (1997)

David C. Look, D. C. Reynolds, Joseph W. Hemsky, J. R. Sizelove, et al.

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Article

Identification of Electron-Irradiation Defects in Semi-Insulating GaAs by Normalized Thermally ...

Physical Review B (1997)

David C. Look, Z-Q. Fang, Joseph W. Hemsky and P. Kengkan

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Article

Electron-Beam Modification of GaAs Surface-Potential - Measurement of Richardson Constant

Journal of Applied Physics (1993)

S. M. Lindsay, Joseph W. Hemsky and David C. Look

The surface potential of GaAs is strongly modified in the presence of a high‐energy electron beam due to the creation ...

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Article

Defect Models in Electron-Irradiated N-Type GaAs

Journal of Applied Physics (1992)

B. Ziebro, Joseph W. Hemsky and David C. Look

1 MeV electron irradiation has been performed in degenerate, n‐type (n≂2×1017 cm-3), molecular beam epitaxial GaAs layers, and Hall effect ...

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Article

Incorporation of Silicon and Aluminum in Low-Temperature Molecular-Beam Epitaxial GaAs

Applied Physics Letters (1992)

M. O. Manasreh, K. R. Evans, C. E. Stutz, David C. Look, et al.

The localized vibrational modes (LVMs) of silicon donor (SiGa) and aluminum isovalent (AlGa) impurities in molecular beam epitaxial GaAs layers ...

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Article

In Situ Hall-Effect System for Real-Time Electron-Irradiation Studies

Review of Scientific Instruments (1990)

B. S. Ziebro, David C. Look, Joseph W. Hemsky and J. Rice

A unique system capable of taking in situ Hall‐effect measurements during electron irradiation has been developed. The key element is ...

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Article

Proton-Scattering on (29)Si in Range Ep = 2.5-3.4 ...

Physical Review C (1973)

Joseph W. Hemsky, S. C. Ling and Paul J. Wolfe

Elastic and inelastic proton scattering measurements on Elastic and inelastic proton scattering measurements on 29Si have been obtained in the ...

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Other

Deep Centers in as Grown and Electron-Irradiated N-GaN

Simc-XI: 2000 International Semiconducting and Insulating Materials Conference, Proceedings (2000)

Z-Q. Fang, L. Polenta, Joseph Hemsky and C. Look

Deep centers in as-grown and electron-irradiated n-GaN on sapphire have been characterized by deep level transient spectroscopy. Electron-irradiation (Elf) creates ...

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Electrical and Optical Properties of As-Grown and Electron-Irradiated ZnO

Proceedings of the 10th Conference on Semiconducting and Insulating Materials (1999)

David C. Look, Donald C. Reynolds, Joseph W. Hemsky, J. R. Sizelove, et al.

Large-diameter (up to 3-inch), n-type ZnO boules grown by a new vapor-phase transport method were studied by temperature-dependent Hall-effect (TDH) ...

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Identification of the 0.15 eV Donor Defect in Bulk ...

MRS Proceedings (1994)

Z-Q. Fang, Joseph Hemsky and David C. Look

The well-known 0.15-eV Hall-effect center appearing in bulk, n-type GaAs quenches under IR illumination and recovers via an Auger-like process ...

About Joseph W. Hemsky

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Articles (11)

Conference Proceedings (3)