Production and Annealing of Electron Irradiation Damage in ZnOApplied Physics Letters
AbstractHigh-energy (>1.6 MeV) electrons create acceptors and donors in single-crystal ZnO. Greater damage is observed for irradiation in the  direction (Zn face) than in the  direction (O face). The major annealing stage occurs at about 300–325 °C, and is much sharper for defects produced by Zn-face irradiation, than for those resulting from O-face irradiation. The defects appear to have a chain character, rather than being simple, near-neighbor vacancy/interstitial Frenkel pairs. These experiments suggest that ZnO is significantly more “radiation hard” than Si, GaAs, or GaN, and should be useful for applications in high-irradiation environments, such as electronics in space satellites.
Citation InformationDavid C. Look, D. C. Reynolds, Joseph W. Hemsky, R. L. Jones, et al.. "Production and Annealing of Electron Irradiation Damage in ZnO" Applied Physics Letters Vol. 75 Iss. 6 (1999) p. 811 - 813 ISSN: 0003-6951
Available at: http://works.bepress.com/joseph_hemsky/1/