Conference Proceedings (3)
Deep Centers in as Grown and Electron-Irradiated N-GaN
Simc-XI: 2000 International Semiconducting and Insulating Materials Conference, Proceedings (2000)
Deep centers in as-grown and electron-irradiated n-GaN on sapphire have been characterized by deep level transient spectroscopy. Electron-irradiation (Elf) creates ...
Electrical and Optical Properties of As-Grown and Electron-Irradiated ZnO
Proceedings of the 10th Conference on Semiconducting and Insulating Materials (1999)
Large-diameter (up to 3-inch), n-type ZnO boules grown by a new vapor-phase transport method were studied by temperature-dependent Hall-effect (TDH) ...