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Selected Works of Santosh KC
Article
Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts
Scientific Reports (2016)
  • Santosh KC, The University of Texas at Dallas
  • Roberto C. Longo, The University of Texas at Dallas
  • Rafik Addou, The University of Texas at Dallas
  • Robert M. Wallace, University of Texas at Dallas
  • Kyeongjae Cho, The University of Texas at Dallas
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Abstract
In an electronic device based on two dimensional (2D) transitional metal dichalcogenides (TMDs), finding a low resistance metal contact is critical in order to achieve the desired performance. However, due to the unusual Fermi level pinning in metal/2D TMD interface, the performance is limited. Here, we investigate the electronic properties of TMDs and transition metal oxide (TMO) interfaces (MoS2/MoO3) using density functional theory (DFT). Our results demonstrate that, due to the large work function of MoO3 and the relative band alignment with MoS2, together with small energy gap, the MoS2/MoO3 interface is a good candidate for a tunnel field effect (TFET)-type device. Moreover, if the interface is not stoichiometric because of the presence of oxygen vacancies in MoO3, the heterostructure is more suitable for p-type (hole) contacts, exhibiting an Ohmic electrical behavior as experimentally demonstrated for different TMO/TMD interfaces. Our results reveal that the defect state induced by an oxygen vacancy in the MoO3 aligns with the valance band of MoS2, showing an insignificant impact on the band gap of the TMD. This result highlights the role of oxygen vacancies in oxides on facilitating appropriate contacts at the MoS2 and MoOx (x < 3) interface, which consistently explains the available experimental observations.
Disciplines
Publication Date
September 26, 2016
DOI
10.1038/srep33562
Publisher Statement
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This article was published in Scientific Reports, volume 6, 2016, and can also be found online here.
Copyright © 2016, The Authors
Citation Information
Santosh KC, Roberto C. Longo, Rafik Addou, Robert M. Wallace, et al.. "Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts" Scientific Reports Vol. 6 (2016) ISSN: 2045-2322
Available at: http://works.bepress.com/santosh-kc/8/
Creative Commons license
Creative Commons License
This work is licensed under a Creative Commons CC_BY International License.