The authors report on the possibility of switching the emission rate of photoelectrons by polarization changes in the plasmon excitation light. Photoelectron emission is strongly enhanced in the near-field of localized surface plasmons and occurs ...

We use photoemission microscopy to characterize localized surface plasmon distributions in nanostructured gold layers on indium-tin-oxide/glass substrates. The Au films have a fractal dimension of ∼1.3 and smallest feature sizes of ∼100 nm. We use ...

We report the deposition of conformal thin layers of 10?50 nm thickness from II-VI quantum dot suspensions on ZnO nanowire substrates. Smooth polycrystalline films of high electronic quality can be obtained from CdSe quantum dots ...

We report recent progress in the construction of a new aberration-corrected photoemission electron microscope. The correcting element in this instrument is a hyperbolic electron mirror which corrects for chromatic and spherical aberration. We present first ...

We report detailed photoconductance measurements on hybrid semiconductor films consisting of CdTe nanoparticles in a poly[2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene (MEH-PPV) matrix. Our results show that a staggered band alignment between organic and inorganic semiconductors produces an efficient ...

We report first results on a new solar cell consisting of a p-i-n hetero-junction formed between n-type transparent nanowires, undoped semiconductor quantum dots and a wide bandgap p-type polymer layer. The overall structure is SnO2/ZnO/CdSe/MEH-PPV ...

We report the growth of single-crystalline ZnO nanowires on n- and p-type Si wafers by electrodeposition. On strongly doped n-type Si high-quality nanowires can be grown under similar conditions as used for metallic substrates. For ...

We report room-temperature, white-color electroluminescence in vertically oriented ZnO nanowires. Excitonic luminescence around 380 nm is observed as a shoulder on a broader defect-related band covering all of the visible range and centered at 620 ...

A vertical field-effect transistor based on semiconductor nanowires is reported. The fabrication of the device uses a self-supporting flexible nanostructured polymer foil as a template and an electrochemical growth technique for the preparation of the ...

Fabrication and operation of a vertical nanowire field-effect transistor is reported. The device is prepared by growing vertical wires in the cylindrical pores of a polymer foil stack. The nanowirediameter is approximately 100 nm, the ...

Zinc oxide (ZnO) is a wide bandgap n-type semiconductor with a variety of optical and electrical applications and many methods of fabrication. Strong optical scattering and photoluminescence from ZnO nanoparticles and films makes the material ...