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Article
Selective Growth of Single-Crystalline ZnO Nanowires on Doped Silicon
Journal of Applied Physics
  • Rolf Könenkamp, Portland State University
  • Robert Campbell Word, Portland State University
  • M. Dosmailov, Portland State University
  • J. Meiss, Portland State University
  • Athavan Nadarajah, Portland State University
Document Type
Article
Publication Date
1-1-2007
Subjects
  • Nanowires,
  • Semiconductors,
  • Particles (Nuclear physics)
Disciplines
Abstract

We report the growth of single-crystalline ZnO nanowires on n- and p-type Si wafers by electrodeposition. On strongly doped n-type Si high-quality nanowires can be grown under similar conditions as used for metallic substrates. For low electron concentrations occurring in weakly n-type or in p-type wafers, nanowire growth is inhibited. This difference allows selective growth in strongly n-type areas. The inhibited growth on weakly n-type and p-type wafers can be improved by applying stronger cathodic electrode potentials or by illuminating the growth area. The wires on n-Si show efficient electroluminescence covering the visible and extending into the ultraviolet spectral range.

Rights

© 2007 American Institute of Physics

Description

This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (R. Könenkamp, R. C. Word, M. Dosmailov, J. Meiss, A. Nadarajah, Selective growth of single-crystalline ZnO nanowires on doped Silicon. Journal of Applied Physics 102, 56103 (2007)) and may be found at (http://dx.doi.org/10.1063/1.2777133).

DOI
10.1063/1.2777133
Persistent Identifier
http://archives.pdx.edu/ds/psu/7256
Citation Information
Könenkamp, R. R., Word, R. C., Dosmailov, M. M., Meiss, J. J., & Nadarajah, A. A. (2007). Selective growth of single-crystalline ZnO nanowires on doped silicon. Journal Of Applied Physics, 102(5), 056103.