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Magnetotransport study of (Sb1−xBix)2Te3 thin films on mica substrate for ideal topological insulator
AIP Advances
  • Yan Ni, Iowa State University
  • Zhen Zhang, Iowa State University
  • Cajetan I. Nlebedim, Iowa State University
  • David C. Jiles, Iowa State University
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We deposited high quality (Sb1−xBix)2Te3 on mica substrate by molecular beam epitaxy and investigated their magnetotransport properties. It is found that the average surface roughness of thin films is lower than 2 nm. Moreover, a local maxima on the sheet resistance is obtained with x = 0.043, indicating a minimization of bulk conductivity at this composition. For (Sb0.957Bi0.043)2Te3, weak antilocalization with coefficient of -0.43 is observed, confirming the existence of 2D surface states. Moreover Shubnikov-de Hass oscillation behavior occurs under high magnetic field. The 2D carrier density is then determined as 0.81 × 1016 m−2, which is lower than that of most TIs reported previously, indicating that (Sb0.957Bi0.043)2Te3 is close to ideal TI composition of which the Dirac point and Fermi surface cross within the bulk bandgap. Our results thus demonstrate the best estimated composition for ideal TI is close to (Sb0.957Bi0.043)2Te3 and will be helpful for designing TI-based devices.

The following article appeared in AIP Advances 6, 055812 (2016) and may be found at

Copyright 2016 Authors. This article is distributed under a Creative Commons Attribution (CC BY) License.
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Yan Ni, Zhen Zhang, Cajetan I. Nlebedim and David C. Jiles. "Magnetotransport study of (Sb1−xBix)2Te3 thin films on mica substrate for ideal topological insulator" AIP Advances Vol. 6 Iss. 5 (2016) p. 055812
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