Dr. Kris Campbell came to Boise State University as an associate professor with a
joint appointment in the Departments of Electrical and Computer Engineering and Materials
Science and Engineering starting in the Fall of 2005. She received a B.S. in electrical
engineering from the University of Nevada, Las Vegas, and then worked as an engineer at
EG&G Energy Measurements and the Idaho National Engineering Laboratory (INEL) where
she became interested in physical chemistry and specifically in chemical systems that
could be used for hazardous waste treatment. This interest took her to graduate school at
the University of California, Davis, where she earned her Ph.D. After graduation, Dr.
Campbell worked on new memory technologies at Micron Technology, Inc. in Boise before
joining the faculty at Boise State. In addition to her numerous patents, she has
published over 20 papers in peer reviewed journals, 2 book chapters, and several
conference proceedings. Dr. Campbell’s current research interests are focused in the
areas of chalcogenide glasses and new electronic memory technologies based on
ion-conduction and electron spin zero-field splitting. She is a member of Sigma Xi, the
IEEE, the Society of Women Engineers, and the American Chemical Society. 

Articles and Conference Proceedings

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Reconfigurable Threshold Logic Gates Using Memristive Devices (with Adrian Rothenbuhler, Thanh Tran, Elisa H. Barney Smith, and Vishal Saxena), Journal of Low Power Electronics and Applications (2013)

We present our design exploration of reconfigurable Threshold Logic Gates (TLG) implemented using silver–chalcogenide memristive...

 

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Electron Self-Trapping in Ge2 Se3 and Its Role in Ag and Sn Incorporation (with Arthur H. Edwards and Andrew C. Pineda), MRS Proceedings (2012)

We present a set of density functional theory (DFT) calculations on the electronic structure of...

 

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Reconfigurable Threshold Logic Gates Using Memristive Devices (with Thanh Tran, Adrian Rothenbuhler, Elisa Barney Smith, and Vishal Saxena), 2012 IEEE Subthreshold Microelectronics Conference (SubVT) (2012)

We present our early design exploration of reconfigurable Threshold Logic Gates (TLG) implemented using Silver-chalcogenide...

 

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Self-Trapping of Single and Paired Electrons in Ge2Se3 (with A. H. Edwards and Andrew C. Pineda), Journal of Physics Condensed Matter (2012)

We report the theoretical prediction of single and paired electron self-trapping in Ge2Se3. In finite...

 

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Investigation of Inter-Diffusion in Bilayer GeTe/SnSe Phase Change Memory Films (with Archana Devasia, David MacMahon, Simone Raoux, and Santosh K. Kurinec), Thin Solid Films (2012)

A metal-chalcogenide layer, SnSe, is inserted between the memory layer GeTe and the top electrode...

 

Contributions to Books

Pulsed and Parallel-Polarization EPR Characterization of the Manganese Cluster of the Photosystem II Oxygen Evolving Complex (with R. D. Britt and J. M. Peloquin), Annual Review of Biophysics and Biomolecular Structure (2000)
 

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Progress in Characterization of the Photosystem II Oxygen Evolving Complex Using Advanced EPR Methods (with R. D. Britt, D. A. Force, D. W. Randall, L. M. Gilchrist, K. L. Clemens, D. M. Gingell, J. M. Peloquin, D. P. Pham, and R. J. Debus), Spectroscopic Methods in Bioinorganic Chemistry (1998)
 

Presentations

Variable Resistance Devices Based on Ion-Conducting and Phase-Change Materials, Reconfigurable Electronics Workshop (2009)

We have designed and tested materials that show promise for potential reconfigurable electronics applications. These...

 

Chalcogenide-Based Materials for Application in Electronic Memory, Micron Technology Engineering Leading Edge Presentation (Invited) (2009)