Skip to main content
profile image
Selected Works of Jianhua Yang
Article
Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
Advanced Materials (2011)
  • Feng Miao
  • John Strachan
  • Jianhua Yang, University of Massachusetts - Amherst
  • M Zhang
  • Ilan Goldfarb
  • Antonio Torrezan
  • Peter Eschbach
  • Ronald Kelley
  • Gilberto Medeiros-Ribeiro
  • R Stanley Williams
Download
Abstract
By employing a precise method for locating and directlyimaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta2O5 is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.
Keywords
  • nanoscale conduction,
  • high performance memristor
Disciplines
Publication Date
Fall November 8, 2011
DOI
10.1002/adma.201103379
Citation Information
Feng Miao, John Strachan, Jianhua Yang, M Zhang, et al.. "Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor" Advanced Materials Vol. 23 Iss. 47 (2011) p. 5633 - 5640
Available at: http://works.bepress.com/jianhua-yang/8/