SelectedWorks - Jianhua Yang

Selected Works of Jianhua Yang

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About Jianhua Yang

Present	Professor, University of Massachusetts Amherst
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Engineering and Electrical and Computer Engineering

Engineering Nonlinearity into Memristors for Passive Crossbar Applications

Applied Physics Letters (2012)

Jianhua Yang, M Zhang, Matthew Pickett and Stanley Williams

Although TaOx memristors have demonstrated encouraging write/erase endurance and nanosecond switching speeds, the linear current-voltage (I-V) characteristic in the low ...

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of ...

Advanced Materials (2011)

Feng Miao, John Strachan, Jianhua Yang, M Zhang, et al.

By employing a precise method for locating and directlyimaging the active switching region in a resistive random access memory (RRAM) device, ...

High switching endurance in TaOxTaOx memristive devices

Applied Physics Letters (2010)

Jianhua Yang, M Zhang, John Strachan, Feng Miao, et al.

We demonstrate over 11010 open-loop switching cyclesfrom a simple memristive device stack ofPt/TaOx /Ta. We compare this system to a ...

Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching

Advanced Materials (2010)

Jianhua Yang, John Strachan, Qiangfei Xia, Douglas Ohlberg, et al.

Thermal diffusion of Ti through Pt electrode forms Ti atom channels of 1 nm diameter along Pt grain boundaries, seeding switching ...

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

Julien Borghetti, Gregory Snider, Philip Kuekes, Jianhua Yang, et al.

The authors of the International Technology Roadmap for Semiconductors1 —the industry consensus set of goals established for advancing silicon integrated ...

A Family of Electronically Reconfigurable Nanodevices

Advanced Materials (2009)

Jianhua Yang, Julien Borghetti, David Murphy, Duncan Stewart, et al.

AFM image of 17 nanodevices with a zoom-in cartoon schematically shows an individual crosspoint device consisting of two Pt metal electrodes ...

The mechanism of electroforming of metal oxide memristive switches

Nanotechnology (2009)

Jianhua Yang, Feng Miao, Matthew Pickett, Douglas Ohlberg, et al.

Metal and semiconductor oxides are ubiquitous electronic materials. Normally insulating, oxides can change behavior under high electric fields—through ‘electroforming’ or ...

Memristive switching mechanism for matal/oxide/metal nano-devices

Nature Nanotechnology (2008)

Jianhua Yang, Matthew Pickett, Xuema Li, Douglas Ohlberg, et al.

Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memory and could lead to novel forms of ...