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Article
Evolution of the Statistical Distribution in a Topological Defect Network
Scientific Reports
  • Fei Xue
  • Xueyun Wang
  • Ion Socolenco
  • Yijia Gu, Missouri University of Science and Technology
  • LongQing Chen
  • Sang-Wook Cheong
Abstract

The complex networks of numerous topological defects in hexagonal manganites are highly relevant to vastly different phenomena from the birth of our cosmos to superfluidity transition. The topological defects in hexagonal manganites form two types of domain networks: type-I without and type-II with electric self-poling. A combined phase-field simulations and experimental study shows that the frequencies of domains with N-sides, i.e. of N-gons, in a type-I network are fitted by a lognormal distribution, whereas those in type-II display a scale-free power-law distribution with exponent ~ 2. A preferential attachment process that N-gons with a larger N have higher probability of coalescence is responsible for the emergence of the scale-free networks. Since the domain networks can be observed, analyzed, and manipulated at room temperature, hexagonal manganites provide a unique opportunity to explore how the statistical distribution of a topological defect network evolves with an external electric field.

Department(s)
Materials Science and Engineering
Keywords and Phrases
  • cosmos,
  • electric field,
  • experimental study,
  • probability,
  • room temperature,
  • statistical distribution
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2015 Nature Publishing Group, All rights reserved.
Creative Commons Licensing
Creative Commons Attribution 4.0
Publication Date
11-1-2015
Publication Date
01 Nov 2015
Citation Information
Fei Xue, Xueyun Wang, Ion Socolenco, Yijia Gu, et al.. "Evolution of the Statistical Distribution in a Topological Defect Network" Scientific Reports Vol. 5 (2015) ISSN: 2045-2322
Available at: http://works.bepress.com/yijia-gu/45/