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Article
Properties of two-dimensional silicon grown on graphene substrate
Journal of Applied Physics
  • R. Zhou, Wright State University - Main Campus
  • L. C. Lew Yan Voon, Wright State University - Main Campus
  • Yan Zhuang, Wright State University - Main Campus
Document Type
Article
Publication Date
9-7-2013
Abstract

The structure and electrical properties of two-dimensional (2D) sheets of silicon on a graphene substrate are studied using first-principles calculations. Two forms of corrugated silicon sheets are proposed to be energetically favorable structures. A shift of the Fermi energy level is found in both corrugated structures. Calculations of electron density show a weak coupling between the silicon layer and graphene substrate in both structures. The two forms of 2D silicon sheets turn out to be metallic and exhibit anisotropic transport properties. © 2013 AIP Publishing LLC.

DOI
10.1063/1.4820473
Citation Information
R. Zhou, L. C. Lew Yan Voon and Yan Zhuang. "Properties of two-dimensional silicon grown on graphene substrate" Journal of Applied Physics Vol. 114 Iss. 9 (2013) ISSN: 00218979
Available at: http://works.bepress.com/yan_zhuang/18/