Skip to main content
Theory and Experiment of High-Speed Cross-Gain Modulation in Semiconductor Lasers
Journal of Quantum Electronics
  • Xiaomin Jin, University of Illinois at Urbana-Champaign
  • T. Keating, University of Illinois at Urbana-Champaign
  • Shun-Lien Chuang, University of Illinois at Urbana-Champaign
Publication Date

We present theory and experiment for the high-speed modulation response of a quantum-well (QW) laser in the presence of an external microwave modulated optical pump in the gain region. The model includes the effects of pump-induced stimulated recombination and cross-gain saturation. Expressions for the small-signal modulation response of the test laser under gain modulation are derived. We also present experimental results using a multiple-QW InGaAlAs Fabry-Perot (FP) laser at 1.552 μm as the test laser and an external pump by a 1.542 μm DFB laser. Comparison between electrical modulation and optical cross-gain modulation (XGM) of the test laser is also presented, which shows improvement of the modulation bandwidth by optical XGM. Our data show a reduction of carrier lifetime with increasing optical pumping, a shift of the test-laser threshold current, a change in the K factor, and a variation of the relaxation frequency with different pump powers. The experimental results agree very well with the theoretical results

Publisher statement
Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Citation Information
Xiaomin Jin, T. Keating and Shun-Lien Chuang. "Theory and Experiment of High-Speed Cross-Gain Modulation in Semiconductor Lasers" Journal of Quantum Electronics Vol. 36 Iss. 12 (2000) p. 1485 - 1493
Available at: