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Article
Measurement of Linewidth Enhancement Factor of Semiconductor Lasers Using an Injection-Locking Technique
Photonics Technology Letters
  • G. Liu, University of Illinois at Urbana-Champaign
  • Xiaomin Jin, University of Illinois at Urbana-Champaign
  • Shun-Lien Chuang, University of Illinois at Urbana-Champaign
Publication Date
5-1-2001
Abstract

A new method for measuring the linewidth enhancement factor of semiconductor lasers using the injection-locking technique is presented. This idea is based on the relation between the upper and lower bounds of the locked and unlocked regimes when the detuning of the pump and slave laser is plotted as a function of the injection power. Our results are confirmed with an independent measurement using amplified spontaneous emission (ASE) spectroscopy as well as our theory, which takes account of the realistic quantum-well (QW) band structure and many-body effects. This method provides a new approach to measure the linewidth enhancement factor above laser threshold.

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Citation Information
G. Liu, Xiaomin Jin and Shun-Lien Chuang. "Measurement of Linewidth Enhancement Factor of Semiconductor Lasers Using an Injection-Locking Technique" Photonics Technology Letters Vol. 13 Iss. 5 (2001) p. 430 - 432
Available at: http://works.bepress.com/xjin/5/