Mode Pattern Analysis of Gallium Nitride-based Laser DiodesProceedings of the International Symposium on Photoelectronic Detection and Imaging 2009: Laser Sensing and Imaging
AbstractIn this paper, we present an analysis of gallium nitride (GaN) quantum-well (QW) laser diode (LD) by numerical simulation. Here we discuss three aspects that are crucial to our analysis. First, the transverse mode pattern is studied, and our current GaN diode laser structure is discussed with optical waveguide mode analysis. Then we compare the QW design of the laser and maximize laser modal gain. Finally, we report the influence of the electron block (e-block) layer on lasing performance of our design.
Copyright2009 Society of Photo-Optical Instrumentation Engineers
Citation InformationXiaomin Jin, Sean Jobe, Simeon Trieu, Benafsh Husain, et al.. "Mode Pattern Analysis of Gallium Nitride-based Laser Diodes" Proceedings of the International Symposium on Photoelectronic Detection and Imaging 2009: Laser Sensing and Imaging Vol. 7382 (2009)
Available at: http://works.bepress.com/xjin/30/