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Presentation
Mode Pattern Analysis of Gallium Nitride-based Laser Diodes
Proceedings of the International Symposium on Photoelectronic Detection and Imaging 2009: Laser Sensing and Imaging
  • Xiaomin Jin, California Polytechnic State University - San Luis Obispo
  • Sean Jobe, California Polytechnic State University - San Luis Obispo
  • Simeon Trieu, California Polytechnic State University - San Luis Obispo
  • Benafsh Husain, California Polytechnic State University - San Luis Obispo
  • Jason Flickinger, California Polytechnic State University - San Luis Obispo
  • Bei Zhang, Peking University
  • Tao Dai, Peking University
  • Xiang-Ning Kang, Peking University
  • Guo-Yi Zhang, Peking University
Publication Date
6-17-2009
Abstract
In this paper, we present an analysis of gallium nitride (GaN) quantum-well (QW) laser diode (LD) by numerical simulation. Here we discuss three aspects that are crucial to our analysis. First, the transverse mode pattern is studied, and our current GaN diode laser structure is discussed with optical waveguide mode analysis. Then we compare the QW design of the laser and maximize laser modal gain. Finally, we report the influence of the electron block (e-block) layer on lasing performance of our design.
Publisher statement
One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Citation Information
Xiaomin Jin, Sean Jobe, Simeon Trieu, Benafsh Husain, et al.. "Mode Pattern Analysis of Gallium Nitride-based Laser Diodes" Proceedings of the International Symposium on Photoelectronic Detection and Imaging 2009: Laser Sensing and Imaging Vol. 7382 (2009)
Available at: http://works.bepress.com/xjin/30/