Light Extraction Improvement of GaN-based Light Emitting Diodes using Patterned Undoped GaN Bottom Reflection GratingsProceedings of Gallium Nitride Materials and Devices IV: San Jose, CA
AbstractThe Gallium Nitride (GaN) Light-Emitting-Diode (LED) bottom refection grating simulation and results are presented. A microstructure GaN bottom grating, either conical holes or cylindrical holes, was calculated and compared with the non-grating (flat) case. A time monitor was also placed just above the top of the LED to measure both time and power output from the top of the LED. Many different scenarios were simulated by sweeping three parameters that affected the structure of the micro-structure grating: unit cell period (A) from 1 to 6 microns, unit cell width (w) from 1 to 6 microns, and unit cell grating height (d) from 50 to 200nm. The simulation results show that the cylindrical grating case has a 98% light extraction improvement, and the conical grating case has a 109% light extraction improvement compared to the flat plate case.
Copyright2009 SPIE--The Society of Photo-Optical Instrumentation Engineers.
Number of Pages8
Citation InformationSimeon Trieu, Xiaomin Jin, Bei Zhang, Tao Dai, et al.. "Light Extraction Improvement of GaN-based Light Emitting Diodes using Patterned Undoped GaN Bottom Reflection Gratings" Proceedings of Gallium Nitride Materials and Devices IV: San Jose, CA Vol. 7216 (2009)
Available at: http://works.bepress.com/xjin/27/