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Presentation
Light Extraction Improvement of GaN-based Light Emitting Diodes using Patterned Undoped GaN Bottom Reflection Gratings
Proceedings of Gallium Nitride Materials and Devices IV: San Jose, CA
  • Simeon Trieu, California Polytechnic State University - San Luis Obispo
  • Xiaomin Jin, California Polytechnic State University - San Luis Obispo
  • Bei Zhang, Peking University
  • Tao Dai, Peking University
  • Kui Bao, Peking University
  • Xiang-Ning Kang, Peking University
  • Guo-Yi Zhang, Peking University
Publication Date
1-26-2009
Abstract

The Gallium Nitride (GaN) Light-Emitting-Diode (LED) bottom refection grating simulation and results are presented. A microstructure GaN bottom grating, either conical holes or cylindrical holes, was calculated and compared with the non-grating (flat) case. A time monitor was also placed just above the top of the LED to measure both time and power output from the top of the LED. Many different scenarios were simulated by sweeping three parameters that affected the structure of the micro-structure grating: unit cell period (A) from 1 to 6 microns, unit cell width (w) from 1 to 6 microns, and unit cell grating height (d) from 50 to 200nm. The simulation results show that the cylindrical grating case has a 98% light extraction improvement, and the conical grating case has a 109% light extraction improvement compared to the flat plate case.

Number of Pages
8
Publisher statement
One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Citation Information
Simeon Trieu, Xiaomin Jin, Bei Zhang, Tao Dai, et al.. "Light Extraction Improvement of GaN-based Light Emitting Diodes using Patterned Undoped GaN Bottom Reflection Gratings" Proceedings of Gallium Nitride Materials and Devices IV: San Jose, CA Vol. 7216 (2009)
Available at: http://works.bepress.com/xjin/27/