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Article
Temperature Dependence of Electrical and Optical Modulation Responses of Quantum-Well Lasers
Journal of Quantum Electronics
  • T. Keating, University of Illinois at Urbana-Champaign
  • Xiaomin Jin, University of Illinois at Urbana-Champaign
  • Shun Lien Chuang, University of Illinois at Urbana-Champaign
  • K. Hess, University of Illinois at Urbana-Champaign
Publication Date
10-1-1999
Abstract
We present theory and experiment for high-speed optical injection in the absorption region of a quantum-well laser and compare the results with those of electrical injection including the carrier transport effect. We show that the main difference between the two responses is the low-frequency roll-off. By using both injection methods, we obtain more accurate and consistent measurements of many important dynamic laser parameters, including the differential gain, carrier lifetime, K factor, and gain compression factor. Temperature-dependent data of the test laser are presented which show that the most dominant effect is the linear degradation of differential gain and injection efficiency with increasing temperature. While the K-factor is insensitive to temperature variation for multiple-quantum-well lasers, we find that the carrier capture time and nonlinear gain suppression coefficient decreases as temperature increases.
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Citation Information
T. Keating, Xiaomin Jin, Shun Lien Chuang and K. Hess. "Temperature Dependence of Electrical and Optical Modulation Responses of Quantum-Well Lasers" Journal of Quantum Electronics Vol. 35 Iss. 10 (1999) p. 1536 - 1534
Available at: http://works.bepress.com/xjin/21/