Temperature Dependence of Electrical and Optical Modulation Responses of Quantum-Well LasersJournal of Quantum Electronics
AbstractWe present theory and experiment for high-speed optical injection in the absorption region of a quantum-well laser and compare the results with those of electrical injection including the carrier transport effect. We show that the main difference between the two responses is the low-frequency roll-off. By using both injection methods, we obtain more accurate and consistent measurements of many important dynamic laser parameters, including the differential gain, carrier lifetime, K factor, and gain compression factor. Temperature-dependent data of the test laser are presented which show that the most dominant effect is the linear degradation of differential gain and injection efficiency with increasing temperature. While the K-factor is insensitive to temperature variation for multiple-quantum-well lasers, we find that the carrier capture time and nonlinear gain suppression coefficient decreases as temperature increases.
Citation InformationT. Keating, Xiaomin Jin, Shun Lien Chuang and K. Hess. "Temperature Dependence of Electrical and Optical Modulation Responses of Quantum-Well Lasers" Journal of Quantum Electronics Vol. 35 Iss. 10 (1999) p. 1536 - 1534
Available at: http://works.bepress.com/xjin/21/