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Article
Optimization of Gallium Nitride-Based Laser Diode Through Transverse Modes Analysis
Chinese Optics Letters
  • Xiaomin Jin, California Polytechnic State University - San Luis Obispo
  • Bei Zhang, Peking University
  • Liang Chen, RSoft Design Group, Inc.
  • Tao Dai, Peking University
  • Guoyi Zhang, Peking University
Publication Date
10-10-2007
Abstract

We investigate the transverse mode pattern in GaN quantum-well (QW) laser diode (LD) by numerical calculation. We optimize the current GaN LD structure by varying the n-GaN layer thickness. The n-type GaN layer is an important factor to determine the optical mode. Finally, we discuss the lasing performance of the GaN LD based on the transverse optical modes.

Publisher statement
This paper was published in Chinese Optics Letters and is made available as an electronic reprint with the permission of OSA. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiply locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. The definitive version is available at http://www.opticsinfobase.org/col/abstract.cfm?uri=col-5-10-588.
Citation Information
Xiaomin Jin, Bei Zhang, Liang Chen, Tao Dai, et al.. "Optimization of Gallium Nitride-Based Laser Diode Through Transverse Modes Analysis" Chinese Optics Letters Vol. 5 Iss. 10 (2007) p. 588 - 590
Available at: http://works.bepress.com/xjin/18/