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Article
Relative Intensity Noise Characteristics of Injection-Locked Semiconductor Lasers
Applied Physics Letters
  • Xiaomin Jin, University of Illinois at Urbana-Champaign
  • Shun-Lien Chuang, University of Illinois at Urbana-Champaign
Publication Date
8-28-2000
Abstract

An experimental and theoretical study of relative intensity noise (RIN) spectra of side-mode injection-locked Fabry–Perot semiconductor lasers is reported. It is shown that the injection-locking technique effectively increases the relaxation oscillation frequency from 4.5 GHz (free-running mode) to 12 GHz (injection-locked mode) and enhances relaxation peaks of the slave laser RIN spectra. Results from our theoretical model, which include the key parameters for semiconductor quantum-well lasers, such as the linewidth enhancement factor, the nonlinear gain saturation coefficients, and optical confinement factor, show good agreement with our experimental results.

Publisher statement
This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article may be found at http://link.aip.org/link/?APPLAB/77/1250/1.
Citation Information
Xiaomin Jin and Shun-Lien Chuang. "Relative Intensity Noise Characteristics of Injection-Locked Semiconductor Lasers" Applied Physics Letters Vol. 77 Iss. 9 (2000) p. 1250 - 1252
Available at: http://works.bepress.com/xjin/13/