Relative Intensity Noise Characteristics of Injection-Locked Semiconductor LasersApplied Physics Letters
AbstractAn experimental and theoretical study of relative intensity noise (RIN) spectra of side-mode injection-locked Fabry–Perot semiconductor lasers is reported. It is shown that the injection-locking technique effectively increases the relaxation oscillation frequency from 4.5 GHz (free-running mode) to 12 GHz (injection-locked mode) and enhances relaxation peaks of the slave laser RIN spectra. Results from our theoretical model, which include the key parameters for semiconductor quantum-well lasers, such as the linewidth enhancement factor, the nonlinear gain saturation coefficients, and optical confinement factor, show good agreement with our experimental results.
Copyright2000 American Institute of Physics.
Citation InformationXiaomin Jin and Shun-Lien Chuang. "Relative Intensity Noise Characteristics of Injection-Locked Semiconductor Lasers" Applied Physics Letters Vol. 77 Iss. 9 (2000) p. 1250 - 1252
Available at: http://works.bepress.com/xjin/13/