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Article
Solution-processed near-infrared polymer photodetectors with an inverted device structure
Organic Electronics
  • Xilan Liu, The University Of Akron
  • Hangxing Wang, The University Of Akron
  • Tingbin Yang, The University Of Akron
  • Wei Zhang, The University Of Akron
  • I-Fan Hsieh, The University Of Akron
  • Stephen Z. D. Cheng, The University Of Akron
  • Xiong Gong, The University of Akron
Document Type
Article
Publication Date
12-1-2012
Abstract
Solution-processed near-infrared polymer photodetectors with an inverted device structure were designed and fabricated. By introducing ZnOx and MoO3 as an electron extraction layer and a hole extraction layer, respectively, the asymmetric characteristics of the inverted polymer photodetectors was constructed. Operating at room temperature, the inverted polymer photodetectors exhibited the detectivity over 1012 cm Hz1/2/W from 400 to 850 nm, resulting from the enhanced photocurrent and reduced dark current induced by fabricating photoactive layer from solution with processing additive 1,8-diiodooctane. These device performances were comparable to those of inorganic counterparts.
Citation Information
Xilan Liu, Hangxing Wang, Tingbin Yang, Wei Zhang, et al.. "Solution-processed near-infrared polymer photodetectors with an inverted device structure" Organic Electronics Vol. 13 Iss. 12 (2012) p. 2929 - 2934
Available at: http://works.bepress.com/xiong_gong/137/