Solution-processed near-infrared polymer photodetectors with an inverted device structureOrganic Electronics
AbstractSolution-processed near-infrared polymer photodetectors with an inverted device structure were designed and fabricated. By introducing ZnOx and MoO3 as an electron extraction layer and a hole extraction layer, respectively, the asymmetric characteristics of the inverted polymer photodetectors was constructed. Operating at room temperature, the inverted polymer photodetectors exhibited the detectivity over 1012 cm Hz1/2/W from 400 to 850 nm, resulting from the enhanced photocurrent and reduced dark current induced by fabricating photoactive layer from solution with processing additive 1,8-diiodooctane. These device performances were comparable to those of inorganic counterparts.
Citation InformationXilan Liu, Hangxing Wang, Tingbin Yang, Wei Zhang, et al.. "Solution-processed near-infrared polymer photodetectors with an inverted device structure" Organic Electronics Vol. 13 Iss. 12 (2012) p. 2929 - 2934
Available at: http://works.bepress.com/xiong_gong/137/