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Article
Four-State Anti-Ferroelectric Random Access Memory
IEEE Electronic Device Letters
  • Melvin M. Vopson, University of Portsmouth
  • Xiaoli Tan, Iowa State University
Document Type
Article
Publication Version
Accepted Manuscript
Publication Date
1-1-2016
DOI
10.1109/LED.2016.2614841
Abstract

Ferroelectric random access memory (FRAM) is a two-state non-volatile memory, in which information is digitally encoded using switchable remanent polarization states within a ferroelectric thin film capacitor. Here, we propose a novel non-volatile memory based on anti-ferroelectric polycrystalline ceramics, termed anti-FRAM (AFRAM). The AFRAM memory cell architecture is similar to FRAM, but it is an operation protocol. Our initial experimental demonstration of the memory effect in anti-ferroelectric ceramic shows, remarkably, that the AFRAM technology encodes data in both ferroelectric sublattices of the anti-ferroelectric medium. This results in a four-state nonvolatile memory capable of storing two digital bits simultaneously, unlike the FRAM technology that has two-memory states and it is capable to store one digital bit per cell.

Comments

© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. DOI: 10.1109/LED.2016.2614841.

Copyright Owner
IEEE
Language
en
File Format
application/pdf
Citation Information
Melvin M. Vopson and Xiaoli Tan. "Four-State Anti-Ferroelectric Random Access Memory" IEEE Electronic Device Letters Vol. 37 Iss. 12 (2016) p. 1551 - 1554
Available at: http://works.bepress.com/xiaoli_tan/70/