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Article
Piezoelectric in situ transmission electron microscopy technique for direct observations of fatigue damage accumulation in constrained metallic thin films
Applied Physics Letters (2002)
  • Xiaoli Tan
  • T. Du, University of Illinois at Urbana-Champaign
  • J.K. Shang, University of Illinois at Urbana-Champaign
Abstract
A piezoelectricin situtransmission electron microscopy(TEM) technique has been developed to observe the damage mechanism in constrained metallic thin films under cyclic loading. The technique was based on the piezoelectric actuation of a multilayered structure in which a metallic thin film was sandwiched between a piezoelectric actuator and a silicon substrate. An alternating electric field with a static offset was applied on the piezoelectric actuator to drive the crack growth in the thin metallic layer while the sample was imaged in TEM. The technique was demonstrated on solder thin films where cavitation was found to be the dominant fatigue damage mechanism.
Keywords
  • Piezoelectric fields,
  • Piezoelectric films,
  • Piezoelectric materials,
  • Transmission electron microscopy,
  • Metallic thin films,
  • Piezoelectric devices,
  • Silicon,
  • Static electric fields,
  • Thin film growth,
  • Thin film structure
Publication Date
2002
Publisher Statement
The following article appeared in Applied Physics Letters 80 (2002): 3946 and may be found at http://dx.doi.org/10.1063/1.1481768. Copyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Citation Information
Xiaoli Tan, T. Du and J.K. Shang. "Piezoelectric in situ transmission electron microscopy technique for direct observations of fatigue damage accumulation in constrained metallic thin films" Applied Physics Letters Vol. 80 Iss. 21 (2002)
Available at: http://works.bepress.com/xiaoli_tan/39/