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Article
Microstructure and Deposition Rate of Aluminum Thin Films from Chemical Vapor Deposition with Dimethylethylamine alane
Applied Physics Letters
  • Byoung-Youp Kim
  • Xiaodong Li, University of South Carolina - Columbia
  • Shi-Woo Rhee
Publication Date
6-17-1996
Document Type
Article
Abstract

Deposition of aluminumfilm from DMEAA in the temperature range of 100–300 °C has been studied. In this temperature range, there is a maximum deposition rate at around 150 °C. The film deposited at 190 °C has elongated blocklike grain shapes, which are ∼600 nm in width and 930 nm in length. Grains in the film deposited at 150 °C showed an equiaxed structure with grain size in the range of 100–300 nm in a film with 600 nm thickness. Aluminum oxide particle inclusion was observed especially at high deposition temperature. Plausible reaction pathways of DMEAA dissociation were suggested to explain the experimental observations.

Citation Information
Byoung-Youp Kim, Xiaodong Li and Shi-Woo Rhee. "Microstructure and Deposition Rate of Aluminum Thin Films from Chemical Vapor Deposition with Dimethylethylamine alane" Applied Physics Letters Vol. 68 Iss. 25 (1996) p. #3567
Available at: http://works.bepress.com/xiaodong_li/130/