Multi-State Memory and Multi-Functional Devices Comprising Magnetoplastic or Magnetoelastic MaterialsBoise State Patents
AssigneeBoise State University
AbstractApparatus and methods are disclosed that enable writing data on, and reading data of, multi-state elements having greater than two states. The elements may be made of magnetoplastic and/or magnetoelastic materials, including, for example, magnetic shape-memory alloy or other materials that couple magnetic and crystallographic states. The writing process is preferably conducted through the application of a magnetic field and/or a mechanical action. The reading process is preferably conducted through atomic-force microscopy, magnetic- force microscopy, spin-polarized electrons, magnetooptical Kerr effect, optical interferometry or other methods, or other methods/effects. The multi functionality (crystallographic, magnetic, and shape states each representing a functionality) of the multi -state elements allows for simultaneous operations including read&write, sense&indicate, and sense&control. Embodiments of the invention may be used, for example, for storing, modifYing, and accessing data for device, sensor, actuator, logic and memory applications. Embodiments may be particularly effective for non-volatile memory or other read&write, sense&indicate, and/or sense&control functions in computer or other applications; such simultaneous operation of two (or more) of said multiple functionalities open new pathways for miniaturization of devices.
Citation InformationPeter Müllner and William Knowlton. "Multi-State Memory and Multi-Functional Devices Comprising Magnetoplastic or Magnetoelastic Materials" (2012)
Available at: http://works.bepress.com/william_knowlton/50/