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Article
Leakage Current Recovery in SRAM After AC Stressing
2003 IEEE International Integrated Reliability Workshop Final Report
  • Cesar Payan, Cypress Semiconductor
  • Santosh Kumar, Cypress Semiconductor
  • Ajit Thupil, Cypress Semiconductor
  • Sridhar Kasichainula, Extreme Networks
  • William B. Knowlton, Boise State University
Document Type
Conference Proceeding
Publication Date
1-1-2003
Abstract
A recovery of sub-threshold current, measured as standby current has been seen on Static Random Access Memory (SRAM) devices after AC stress. A theoretical model is presented to explain the observed data in this paper. A trapped charge model is proposed for decrease in subthreshold current leading to lower observed standby current on continuous negative unipolar write stress. Several mechanisms have been proposed earlier such as Poole-Frenkel enhanced emission from traps, trap assisted tunneling, and band-to band tunneling to explain possible source of off current [5,9].
Citation Information
Cesar Payan, Santosh Kumar, Ajit Thupil, Sridhar Kasichainula, et al.. "Leakage Current Recovery in SRAM After AC Stressing" 2003 IEEE International Integrated Reliability Workshop Final Report (2003)
Available at: http://works.bepress.com/william_knowlton/46/