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Article
Modeling Temperature Dependency (6-400K) of the Leakage Current Through the SiO2/High-K Stacks
2010 Proceedings of the European Solid-State Device Research Conference (ESSDERC),
  • L. Vandelli, Università di Modena e Reggio Emilia
  • A. Padovani, Università di Modena e Reggio Emilia
  • L. Larcher, Università di Modena e Reggio Emilia
  • Richard G. Southwick, III, Boise State University
  • William B. Knowlton, Boise State University
  • Gennadi Bersuker, SEMATECH
Document Type
Conference Proceeding
Publication Date
11-1-2010
Abstract
We investigate the mechanism of the gate leakage current in the Si/SiO2/HfO2/TiN stacks in a wide temperature range (6–400 K) by simulating the electron transport using a multi-phonon trap assisted tunneling model. Good agreement between simulations and measurements allows indentifying the dominant physical processes controlling the temperature dependency of the gate current. In depletion/weak inversion, the current is limited by the supply of carrier. In strong inversion, the electron-phonon interaction is found to be the dominant factor determining the current voltage and temperature dependencies. These simulations allowed to extract important defect parameters, e.g. the trap relaxation energy and phonon effective energy, which defines the defect atomic structure.
Citation Information
L. Vandelli, A. Padovani, L. Larcher, Richard G. Southwick, et al.. "Modeling Temperature Dependency (6-400K) of the Leakage Current Through the SiO2/High-K Stacks" 2010 Proceedings of the European Solid-State Device Research Conference (ESSDERC), (2010)
Available at: http://works.bepress.com/william_knowlton/3/