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Evidence of Intrinsic Double Acceptor in GaAs
Applied Physics Letters
  • Phil Won Yu
  • W. C Mithel
  • M. G Mier
  • S. S Li
  • Weizhen Wang, Wright State University - Main Campus
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Acceptors present in undoped p‐type conducting GaAs have been studied with photoluminescence, temperature‐dependent Hall measurements, deep level transient spectroscopy, and spark source mass spectrometry. It is shown that p‐type conduction is due to presence of the shallow acceptor CAs and the cation antisite double acceptor GaAs. The first and second ionization energies determined for GaAs are 77 and 230 meV from the valence‐band edge.

Copyright © 1982, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 41.6, and may be found at

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Phil Won Yu, W. C Mithel, M. G Mier, S. S Li, et al.. "Evidence of Intrinsic Double Acceptor in GaAs" Applied Physics Letters Vol. 41 Iss. 6 (1982) p. 532 - 534 ISSN: 0003-6951
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