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Article
Evidence of Intrinsic Double Acceptor in GaAs
Applied Physics Letters
  • Phil Won Yu
  • W. C Mithel
  • M. G Mier
  • S. S Li
  • Weizhen Wang, Wright State University - Main Campus
Document Type
Article
Publication Date
1-1-1982
Abstract

Acceptors present in undoped p‐type conducting GaAs have been studied with photoluminescence, temperature‐dependent Hall measurements, deep level transient spectroscopy, and spark source mass spectrometry. It is shown that p‐type conduction is due to presence of the shallow acceptor CAs and the cation antisite double acceptor GaAs. The first and second ionization energies determined for GaAs are 77 and 230 meV from the valence‐band edge.

Comments

Copyright © 1982, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 41.6, and may be found at http://apl.aip.org/

DOI
10.1063/1.93579
Citation Information
Phil Won Yu, W. C Mithel, M. G Mier, S. S Li, et al.. "Evidence of Intrinsic Double Acceptor in GaAs" Applied Physics Letters Vol. 41 Iss. 6 (1982) p. 532 - 534 ISSN: 0003-6951
Available at: http://works.bepress.com/weizhen_wang/4/