We present an approximate model for laser beam-induced current (LBIC) imaging of arrays of semiconductor devices based on homogenization. LBIC is a non-destructive technique useful for the characterization and quality control of semiconductor focal plane arrays, a key component in modern imaging systems. The model provides not only an efficient alternative for LBIC image simulation of large uniform arrays, but also an effective method for detection of non-uniformities among arrays. Numerical examples are presented to illustrate the effectiveness of this method in detecting array non-uniformities due to variations in dislocation/size or doping level among p–n junction diodes.