Article
Existence of Stationary Solutions to an Energy Drift-Diffusion Model for Semiconductor Devices
Mathematical Models and Methods in Applied Sciences
Document Type
Article
Publication Date
10-1-2001
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Abstract
We analyze a mathematical model for semiconductors derived from the hydrodynamic model under the massless assumption. This model augments the classical drift-diffusion model by including temperature as a dependent variable. We establish the existence of stationary solutions near the equilibrium state.
DOI
10.1142/S0218202501001124
Citation Information
Weifu Fang and Kazufumi Ito. "Existence of Stationary Solutions to an Energy Drift-Diffusion Model for Semiconductor Devices" Mathematical Models and Methods in Applied Sciences Vol. 11 Iss. 5 (2001) p. 827 - 840 ISSN: 0218-2025 Available at: http://works.bepress.com/weifu_fang/11/