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An XANES and XES investigation of the electronic structure of indium rich InxGa1-xN films
Journal of Alloys and Compounds
  • Iraida N. Demchenko, University of Nevada, Las Vegas
  • M. Chernyshova, Institute of Plasma Physics and Laser Microfusion
  • E. Piskorska-Hommel, Institute of Physics PAS
  • R. Minikayev, Institute of Physics PAS
  • J. Z. Domagala, Institute of Physics PAS
  • T. Yamaguchi, Ritsumeikan University
  • Wayne C. Stolte, University of Nevada, Las Vegas
  • K. Lawniczak-Jablonska, Institute of Physics PAS
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The electronic structure of InGaN epitaxial layers grown on sapphire substrates was studied using X-ray absorption at the In L3 and N K edges, as well as N Kα X-ray emission. Knowing that the InGaN crystallizes in an anisotropic wurtzite structure, the linear polarization of synchrotron radiation was exploited to estimate the influence of the crystal structure anisotropy on the distribution of the local density of states at the site of In and N. The calculated partial density of states describes the observed anisotropy in the measured spectra. Influence of the core–hole effect on the analyzed absorption spectra was verified and reveal that a core hole potential is effectively screened by the surface mobile electrons for the sample with maximum indium content. The bandgap values were provided for the investigated InGaN alloys and were found to vary preudo-lineary with indium content.

  • Crystal growth,
  • Crystallography,
  • Free Energy Force Field (FEFF),
  • Gallium alloys,
  • Indium alloys,
  • X-ray Absorption Near Edge Structure,
  • X-ray spectroscopy,
  • XANES,
  • XES


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Citation Information
Iraida N. Demchenko, M. Chernyshova, E. Piskorska-Hommel, R. Minikayev, et al.. "An XANES and XES investigation of the electronic structure of indium rich InxGa1-xN films" Journal of Alloys and Compounds Vol. 509 Iss. 39 (2011) p. 9528 - 9535
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