Skip to main content
Article
Use of Stress to Produce Highly Oriented Tetragonal Lead Zirconate Titanate (PZT 40/60) Thin Films and Resulting Electrical Properties
Journal of the American Ceramic Society
  • Geoffrey L. Brennecka
  • Wayne Huebner, Missouri University of Science and Technology
  • Bruce A. Tuttle
  • Paul G. Clem
Abstract
Thin films of Pb(Zr0.4TiO.6)O3 produced by chemical solution deposition were used to study the effects of stress from different platinized single-crystal substrates on film orientation and resulting electrical properties. Films deposited on MgO preferred a (001) orientation due to compressive stress on the film during cooling through the Curie temperature (TC). Films on Al2O3 were under minimal stress at TC, resulting in a mixture of orientations. Those on Si preferred a (111) orientation due to templating from the bottom electrode. Films oriented in the 〈001〉 direction demonstrated lower dielectric constants and higher Pr and −d31 values than (111) films.
Department(s)
Materials Science and Engineering
Sponsor(s)
United States. Department of Energy
Keywords and Phrases
  • Lead Zirconate Titanate,
  • Stress,
  • Thin Films
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2004 American Ceramic Society, All rights reserved.
Publication Date
8-1-2004
Citation Information
Geoffrey L. Brennecka, Wayne Huebner, Bruce A. Tuttle and Paul G. Clem. "Use of Stress to Produce Highly Oriented Tetragonal Lead Zirconate Titanate (PZT 40/60) Thin Films and Resulting Electrical Properties" Journal of the American Ceramic Society (2004)
Available at: http://works.bepress.com/wayne-huebner/40/