Novel Yttrium-Stabilized Zirconia Polymeric Precursor for the Fabrication of Thin FilmsJournal of Materials Research
AbstractAn acetate-based polymeric precursor for producing yttrium-stabilized zirconia (YSZ) was developed. The precursor was prepared under ambient conditions and contains only yttrium and zirconium cations. Dense, crack-free films were fabricated with this precursor on alumina substrates at a rate of 60 nm per deposition, producing polycrystalline YSZ at temperatures as low as 600 °C. Grain growth in thin YSZ films followed Arrhenius equation with an activation energy approximately 0.45 eV. The residual strain in YSZ films decreased with increasing annealing temperature from 600 to 900 °C.
Department(s)Materials Science and Engineering
Sponsor(s)United States. Department of Energy
Keywords and Phrases
- Yttrium Stabilized Zirconia,
Document TypeArticle - Journal
Document VersionFinal Version
Rights© 2004 Materials Research Society, All rights reserved.
Citation InformationRoger M. Smith, X.-D. Zhou, Wayne Huebner and Harlan U. Anderson. "Novel Yttrium-Stabilized Zirconia Polymeric Precursor for the Fabrication of Thin Films" Journal of Materials Research (2004)
Available at: http://works.bepress.com/wayne-huebner/34/