Electron Beam Induced Crystallization of Sputter Deposited Amorphous Alumina Thin FilmsMaterials Letters
AbstractCrystallization of amorphous alumina (Al2O3) in a thin film capacitor structure was induced by the electron beam of a transmission electron microscope (TEM). The crystallization was initially observed while collecting selected area diffraction (SAD) patterns after 2 min of beam exposure at an accelerating voltage of 200 keV and a beam current density of 13.0 A/cm2. After 16 min of beam exposure, distinct ring patterns associated with crystal growth were evident in the SAD pattern. Bright field and dark field TEM images confirmed that crystallization occurred, with crystals growing up to ~50 nm in diameter.
Department(s)Materials Science and Engineering
Keywords and Phrases
Document TypeArticle - Journal
Rights© 2012 Elsevier, All rights reserved.
Citation InformationJack Murray, Kai Song, Wayne Huebner and Matthew O'Keefe. "Electron Beam Induced Crystallization of Sputter Deposited Amorphous Alumina Thin Films" Materials Letters (2012)
Available at: http://works.bepress.com/wayne-huebner/14/