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Article
Electron Beam Induced Crystallization of Sputter Deposited Amorphous Alumina Thin Films
Materials Letters
  • Jack Murray
  • Kai Song
  • Wayne Huebner, Missouri University of Science and Technology
  • Matt OKeefe, Missouri University of Science and Technology
Abstract

Crystallization of amorphous alumina (Al2O3) in a thin film capacitor structure was induced by the electron beam of a transmission electron microscope (TEM). The crystallization was initially observed while collecting selected area diffraction (SAD) patterns after 2 min of beam exposure at an accelerating voltage of 200 keV and a beam current density of 13.0 A/cm2. After 16 min of beam exposure, distinct ring patterns associated with crystal growth were evident in the SAD pattern. Bright field and dark field TEM images confirmed that crystallization occurred, with crystals growing up to ~50 nm in diameter.

Department(s)
Materials Science and Engineering
Keywords and Phrases
  • Crystallization,
  • Amorphous,
  • Alumina,
  • Thin-Film,
  • Capacitor
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2012 Elsevier, All rights reserved.
Publication Date
5-1-2012
Citation Information
Jack Murray, Kai Song, Wayne Huebner and Matt OKeefe. "Electron Beam Induced Crystallization of Sputter Deposited Amorphous Alumina Thin Films" Materials Letters (2012)
Available at: http://works.bepress.com/wayne-huebner/14/