Article
Electrical resistivity and magnetoresistance of single-crystal Tb5Si2.2Ge1.8
Physical Review B
Document Type
Article
Disciplines
Publication Date
11-16-2009
DOI
10.1103/PhysRevB.80.174411
Abstract
A positive colossal magnetoresistance (CMR) of 160% has been observed in Tb5Si2.2Ge1.8 with the magnetic field applied parallel to the a axis. When the magnetic field is applied parallel to the b and c axes, the magnetoresistance (MR) is less than 8% and 5%, respectively. The CMR effect originates from intrinsic crystallographic phase coexistence. The anisotropy of the MR effect is due to a unique geometric arrangement of the interphase boundaries and large magnetocrystalline anisotropy of the compound.
Copyright Owner
American Physical Society
Copyright Date
2009
Language
en
File Format
application/pdf
Citation Information
Min Zou, Vitalij K. Pecharsky, Karl A. Gschneidner, Yaroslav Mudryk, et al.. "Electrical resistivity and magnetoresistance of single-crystal Tb5Si2.2Ge1.8" Physical Review B Vol. 80 Iss. 17 (2009) p. 174411 Available at: http://works.bepress.com/thomas_lograsso/53/
This article is from Physical Review B 80, no. 17 (2009): 174411, doi:10.1103/PhysRevB.80.174411.