Presentation
Spontaneous generation of voltage in single-crystal Gd5Si2Ge2 during magnetostructural phase transformations
Ames Laboratory Conference Papers, Posters, and Presentations
Document Type
Conference Proceeding
Disciplines
Conference
50th Annual Conference on Magnetism and Magnetic Materials
Publication Date
4-19-2006
Geolocation
(37.3393857, -121.89495549999998)
Abstract
The spontaneous generation of voltage (SGV) in single-crystal and polycrystallineGd5Si2Ge2 during the coupled magnetostructural transformation has been examined. Our experiments show reversible, measurable, and repeatable SGV responses of the materials to the temperature and magnetic field. The parameters of the response and the magnitude of the signal are anisotropic and rate dependent. The magnitude of the SGV signal and the critical temperatures and critical magnetic fields at which the SGV occurs vary with the rate of temperature and magnetic-field changes.
Copyright Owner
American Institute of Physics
Copyright Date
2006
Language
en
Citation Information
Min Zou, H. Tang, Deborah L. Schlagel, Thomas A. Lograsso, et al.. "Spontaneous generation of voltage in single-crystal Gd5Si2Ge2 during magnetostructural phase transformations" San Jose, CA(2006) Available at: http://works.bepress.com/thomas_lograsso/153/
Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article is from Journal of Applied Physics 99 (2006): 08B304 and may be found at http://dx.doi.org/10.1063/1.2162027.