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Reflectance anisotropy of Gd5Si2Ge2 and Tb5Si2.2Ge1.8
Applied Physics Letters
  • S. J. Lee, Iowa State University
  • Joong Mok Park, Iowa State University
  • J. E. Snyder, Iowa State University
  • David C. Jiles, Iowa State University
  • Deborah L. Schlagel, Iowa State University
  • Thomas A. Lograsso, Iowa State University
  • A. O. Pecharsky, Iowa State University
  • David W. Lynch, Iowa State University
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Reflectance difference (RD) spectra for the a–b plane of the single crystals of Gd5Si2Ge2and b–c planes of Gd5Si2Ge2 and Tb5Si2.2Ge1.8 were obtained in the photon energy range of 1.5–5.5 eV. Several peaks were observed for these crystals in the measured spectrum range. Similar features were observed in the RD spectra for the b–c planes ofGd5Si2Ge2 and Tb5Si2.2Ge1.8, while different features were observed for the a–b plane and b–c plane of Gd5Si2Ge2. The RD spectra for the crystals arise not only from the surface anisotropy but also from the bulk anisotropy due to the monoclinic structure of the bulk crystal.

The following article appeared in Applied Physics Letters 84 (2004): 1865 and may be found at

Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
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American Institute of Physics
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S. J. Lee, Joong Mok Park, J. E. Snyder, David C. Jiles, et al.. "Reflectance anisotropy of Gd5Si2Ge2 and Tb5Si2.2Ge1.8" Applied Physics Letters Vol. 84 Iss. 11 (2004) p. 1865 - 1867
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