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High Performance Inversion-type InGaAs MOSFET with ALD High-k Gate Dielectric
Birck Poster Sessions
  • Y. Xuan, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
  • Y. Q. Wu, Birck Nanotechnology Center and Electrical and Computer Engineering, Purdue University
  • H. C. Lin, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
  • T. Shen, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
  • P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
Abstract
The silicon basec complementary metal-oxide-semicoonductor (CMOS) technology now faces ever shrinking device dimensions and demands for higher performance. The latest advance in CMOS industry suggests that ALD high-k dielectrics developed for silicon may pave the way for novel channel materials in future CMOS integrated circuits. In this work, high performance inversion-type enhancement mode InGaAs MOSFET with ex situ ALD gate dielectric and 0.5 micron gate length is demonstrated for the first time with maximum drain current of 367mA/mm and extrinsic transconductance of 130mS/mm.
Keywords
  • atomic layer deposition
Date of this Version
4-2-2007
Citation Information
Y. Xuan, Y. Q. Wu, H. C. Lin, T. Shen, et al.. "High Performance Inversion-type InGaAs MOSFET with ALD High-k Gate Dielectric" (2007)
Available at: http://works.bepress.com/t_shen/57/