Article
Preparation of atomically clean and flat Si(100) surfaces by low-energy ion sputtering and low-temperature annealing
Applied Surface Science
(2003)
Keywords
- preparation,
- atomically clean,
- low-energy,
- ion sputterin,
- temperature,
- annealing
Publication Date
January 1, 2003
Citation Information
J. C. Kim, J.-Y. Ji, J. S. Kline, J. R. Tucker, and T.-C. Shen, “Preparation of atomically clean and flat Si(100) surfaces by low-energy ion sputtering and low-temperature annealing,” Appl. Surf. Sci. 220, 293 (2003).