Article
Electron-stimulated bond rearrangements on the H/Si(100)-3x1 surface
Surface Science
Document Type
Article
Publication Date
1-1-2000
Disciplines
https://doi.org/10.1016/S0039-6028(99)01147-4
Citation Information
T.-C. Shen, J.A. Steckel, and K.D. Jordan,”Electron-stimulated bond rearrangements on the H/Si(100)-3x1 surface,” Surf. Sci. 446, 211-218 (2000).