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Presentation
Fabrication and electrical characterization of 2D dopant nanoelectronic devices in Si
All Physics Faculty Publications
  • J. S. Kline
  • S. J. Robinson
  • J. R. Tucker
  • J. -Y. Ji
  • T. -C. Shen, Utah State University
  • C. Yang
  • R. -R. Du
Document Type
Presentation
Publication Date
11-18-2004
Citation Information
Talk at 51st International Symposium of AVS, Anaheim, CA, 11/18/2004. “Fabrication and electrical characterization of 2D dopant nanoelectronic devices in Si,” presented by J. S. Kline, S. J. Robinson, J. R. Tucker, J.-Y. Ji, T.-C. Shen, C. Yang, R.-R. Du.