"Fabrication and electrical characterization of 2D dopant nanoelectronic devices in Si" by J. S. Kline

Selected Works of T. -C. Shen

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Presentation

Fabrication and electrical characterization of 2D dopant nanoelectronic devices in Si

All Physics Faculty Publications

J. S. Kline
S. J. Robinson
J. R. Tucker
J. -Y. Ji
T. C. Shen, Utah State University
C. Yang
R. -R. Du

Document Type

Presentation

Publication Date

11-18-2004

Disciplines

Physical Sciences and Mathematics and
Physics

Citation Information

Talk at 51st International Symposium of AVS, Anaheim, CA, 11/18/2004. “Fabrication and electrical characterization of 2D dopant nanoelectronic devices in Si,” presented by J. S. Kline, S. J. Robinson, J. R. Tucker, J.-Y. Ji, T.-C. Shen, C. Yang, R.-R. Du.