Skip to main content
Article
Heavy element doping for enhancing thermoelectric properties of nanostructured zinc oxide
Australian Institute for Innovative Materials - Papers
  • Priyanka Jood, University of Wollongong
  • Rutvik J Mehta, Rensselaer Polytechnic Institute
  • Yanliang Zhang, Rensselaer Polytechnic Institute
  • Theo Borca-Tasciuc, Rensselaer Polytechnic Institute
  • S X Dou, University of Wollongong
  • David J Singh, Oak Ridge National Laboratory
  • Ganpati Ramanath, Rensselaer Polytechnic Institute
RIS ID
87397
Publication Date
1-1-2014
Publication Details

Jood, P., Mehta, R. J., Zhang, Y., Borca-Tasciuc, T., Dou, S. Xue., Singh, D. J. & Ramanath, G. (2014). Heavy element doping for enhancing thermoelectric properties of nanostructured zinc oxide. RSC Advances, 4 (13), 6363-6368.

Abstract
ZnO is a high melting point, high charge carrier mobility semiconductor with potential as a thermoelectric material, but its high thermal conductivity κ is the limiting factor for increasing the thermoelectric figure of merit ZT. Here, we demonstrate that doping ZnO with heavy elements can significantly enhance ZT. Indium doping leads to ultralow κ [similar] 3 W m−1 K−1 and a high power factor α2σ [similar] 1.230 × 10−3 W m−1 K−2, yielding ZT1000K [similar] 0.45 that is [similar]80% higher than non-nanostructured In–Zn–O alloys. Although Bi doping also yields a high Seebeck coefficient of α300K [similar] 500 μV K−1, Bi segregation, grain growth and defect complexing are unfavorable for increasing ZT. Thus, besides increased impurity scattering of phonons, the concurrence of nanostructuring and charge carrier concentration control is key to ZT enhancement. Our results open up a new means to realize high ZT thermoelectric nanomaterials based on ZnO.
Grant Number
ARC/LX0881969
Grant Number
ARC/DP0879714
Citation Information
Priyanka Jood, Rutvik J Mehta, Yanliang Zhang, Theo Borca-Tasciuc, et al.. "Heavy element doping for enhancing thermoelectric properties of nanostructured zinc oxide" (2014) p. 6363 - 6368
Available at: http://works.bepress.com/sxdou/524/