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Article
Packaging effects on RadFET sensors for high energy physics experiments
Faculty of Engineering - Papers (Archive)
  • Julien Mekki, CERN
  • Laurent Dusseau, University Montpellier II, France
  • Maurice Glaser, CERN
  • Susanna Guatelli, ANSTO
  • Michael Moll, CERN
  • Maria Grazia Pia, INFN Sezione di Genova
  • Federico Ravotti, CERN
RIS ID
31739
Publication Date
1-1-2009
Publication Details

Mekki, J., Dusseau, L., Glaser, M., Guatelli, S., Moll, M., Pia, M. Grazia. & Ravotti, F. (2009). Packaging effects on RadFET sensors for high energy physics experiments. IEEE Transactions on Nuclear Science, 56 (4), 2061-2069.

Abstract

RadFETs in customized chip carrier packages are installed in the LHC Experiments as radiation monitors. The package influence on the dose measurement in the complex LHC radiation environment is evaluated using Geant4 simulations and experimental data.

Disciplines
Citation Information
Julien Mekki, Laurent Dusseau, Maurice Glaser, Susanna Guatelli, et al.. "Packaging effects on RadFET sensors for high energy physics experiments" (2009) p. 2061 - 2069
Available at: http://works.bepress.com/susanna_guatelli/3/