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Characterization of New Infrared Nonlinear Optical Material with High Laser Damage Threshold, Li2Ga2GeS6
Chemistry of Materials
  • Youngsik Kim, Iowa State University
  • Inseok Seo, Iowa State University
  • Steve W. Martin, Iowa State University
  • Jaewook Baek, University of Houston
  • P. Shiv Halasyamani, University of Houston
  • Nachiappan Arumugam, University of Texas at Austin
  • Hugo Steinfink, University of Texas at Austin
Document Type
Article
Publication Date
10-14-2008
DOI
10.1021/cm8007304
Abstract

A new thio-germanium sulfide Li2Ga2GeS6 has been synthesized for the first time and its structure was found to be isomorphous with AgGaGeS4, which is well-known as a promising infrared NLO material. The host structure is built of GaS4 tetrahedra linked by corners to GeS4 tetrahedra to create a 3D framework forming tunnels along the c-axis, in which the Li+ions are located. The second harmonic generation (SHG) efficiency determined on powders of Li2Ga2GaS6 is 200 times larger than that of α-SiO2. Unlike AgGaS2 and AgGaGeS4, Li2Ga2GeS6 was observed to be very stable under prolonged Nd:YAG 1.064 μm laser pumping, indicative of a large improvement in laser damage threshold. This new material could supplant Ag phases in the next generation of high-power infrared NLO applications.

Comments

Reprinted with permission from Chemistry of Materials 20 (2008): 6048–6052, doi:10.1021/cm8007304. Copyright 2008 American Chemical Society.

Copyright Owner
American Chemical Society
Language
en
File Format
application/pdf
Citation Information
Youngsik Kim, Inseok Seo, Steve W. Martin, Jaewook Baek, et al.. "Characterization of New Infrared Nonlinear Optical Material with High Laser Damage Threshold, Li2Ga2GeS6" Chemistry of Materials Vol. 20 Iss. 19 (2008) p. 6048 - 6052
Available at: http://works.bepress.com/steve_martin/13/